منابع مشابه
High Quality YBa2Cu3O7-x Superconducting Thin Films Grown by MOCVD
YBCO thin films have been grown by Metal Organic Chemical Vapour Deposition in ;I cold wall type reactor. The 0-diketonates of yttrium, barium and copper are used as precursors. Filrna have bcen deposited on (001 I MgO and (012) LaA103 single crystalline substrates. The morphology is very dependant on thc gas p h a x composition. Different oxygen partial pressures have been investigated. An inc...
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In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10 M AgNO3, 6x10 -2 M InCl3 and 3x10 -2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films ...
متن کاملHREM Characterization of Interfaces in Thin MOCVD Superconducting Films
This paper is concerned with high-T, superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces yttria stabilized zirconia buffer / (l-102)-sapphire substrate, YBazCu307-, film / Y2O3 precipitates as well as YBa2Cu307-, film / (001)-NdGa03, -SrTiO3, and -MgO substrates has been investigated by high resolution electron micro...
متن کاملGrowth of Ga-doped ZnO thin film prepared by MOCVD for TCO application
The group-III elements, such as Al, Ga and In, are possible dopants for ZnO to improve the electric conductivity of ZnO thin film. Since Ga has lower cost than In and has higher oxidation resistance than Al, it becomes the preferred dopants for ZnO thin film for transparent conducting oxide (TCO) application. In the research, we used MOCVD method with Ga doping to prepare the Ga-doped ZnO thin ...
متن کاملMOCVD growth of non-epitaxial and epitaxial ZnS thin films
Thin films of ZnS have been deposited by MOCVD on both BaTa206/ITO/glass and Si substrates. Diethylzinc (DEZn) and H2S are used for deposition on substrates heated to the 250-400°C temperature range. The microstructure and properties of ZnS films were studied by X-ray diffractometry (XRD), ultraviolet/visible spectrophotometry (UVS) and scanning electron microscopy (SEM). Films prepared on BaTa...
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ژورنال
عنوان ژورنال: Platinum Metals Review
سال: 2005
ISSN: 0032-1400,1471-0676
DOI: 10.1595/147106705x45631